J.V. Moloney, R.A. Indik, C.Z Ning, A. Egan
Arizona Center for Mathematical Sciences
University of Arizona
Tucson, AZ 85721, USA
A full scale simulation model, that resolves the spatio-temporal behavior of competing longitudinal mode and transverse filamentation instabilities in a wide variety of high brightness edge emitter geometries, is presented. The model is highly modular and is built on a first principles microscopic physics basis. The nonlinear optical response function of the semiconductor, computed for specific QW structures (well-width, composition, strain etc), covers the low-density absorption to high density gain saturation regimes. As an illustration of its robustness as a laser design tool, the model is applied to a Monolithically integrated Flared Amplifier Master Oscillator Power Amplifier (MFA-MOPA) semiconductor laser.
Keywords: MOPA, high power semiconductor lasers, diffraction-limited