: Jörg Hader :
  • E-mail:


  • Phone:
    • (520) 621-6652 (voice)
    • (520) 621-1510 (fax)

  • Mailing Address:
    • Jörg Hader
    • Department of Mathematics
    • 617 N. Santa Rita
    • University of Arizona
    • Tucson, AZ 85721-0089

Research Associate Professor,
Optical Sciences Center and Arizona Center for Mathematical Sciences,
University of Arizona

Senior Scientist,
Nonlinear Control Strategies Inc.,
Tucson, Arizona

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Recent Publications
"VECSEL threshold and output power-shutoff dependence on the carrier recombination rates,"
A.R. Zakharian, J. Hader, J.V. Moloney, and S.W. Koch, IEEE Photon. Technol. Lett. 17, 2511-2513 (2005).
" Supression of carrier recombination in semiconductor lasers by phase-space filling,"
J. Hader, J.V. Moloney, and S.W. Koch, Appl. Phys. Lett. 87, 201112 (2005).
" Microscopic evaluation of spontaneous emission- and Auger-processes in semiconductor lasers,"
J. Hader, J.V. Moloney, and S.W. Koch, IEEE J. Quantum Electron. 41, 1217-1226 (2005).
" High-power optically pumped VECSEL using a double-well resonant periodic gain structure,"
L. Fan, J. Hader, M. Schillgalies, M. Fallahi, A.R. Zakharian, J.V. Moloney, R. Bedford, J.T. Murray, S.W. Koch, and W. Stolz, IEEE, Photon, Technol. Lett. 17, 1764-1766 (2005).
" Nitrogen incorporation effects on gain properties of GaInNAs lasers: Experiment and theory,"
A. Thranhardt, I. Kuznetsova, C. Schlichenmaier, S.W. Koch, L. Shterengas, G. Belenky, J.Y. Yeh, L.J. Mawst, N. Tansu, J. Hader, J.V. Moloney, and W.W. Chow, Appl. Phys. Lett. 86, 201117 (2005).
" Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources,"
L. Fan, M. Fallahi, J. Hader, A.R. Zakharian, M. Kolesik, J.V. Moloney, T. Qiu, A. Schulzgen, N. Peyghambarian, W. Stolz, S.W. Koch, and J.T. Murray, Appl. Phys. Lett. 86, 211116 (2005).
" Type I-type II transition in InGaAs-GaNAs heterostructures,"
C. Schlichenmaier, H. Gruning, A. Thranhardt, P.J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S.W. Koch, J. Hader, and J.V. Moloney, Appl. Phys. Lett. 86, 081903 (2005).
" Nonequilibrium gain in optically pumped GaInNAs laser structures,"
A. Thranhardt, S. Becker, C. Schlichenmaier, I. Kuznetsova, T. Meier, S.W. Koch, J. Hader, J.V. Moloney, and W.W. Chow, Appl. Phys. Lett. 85, 5526-5528 (2004).

Selected Older Publicationss
"Gain and Absorption: Many-Body Effects,"
S.W. Koch, J. Hader, A. Thranhardt, and J. V. Moloney, in "Optoelectronic Devices", ed. by J. Piprek, Springer, New York (2004).
"Fabry-Perot Lasers: Temperature and Many-Body Effects,"
B. Grote, E.K. Heller, R. Scarmozzino, J. Hader, J. V. Moloney, and S.W. Koch, in "Optoelectronic Devices", ed. by J. Piprek, Springer, New York (2004).
"Monolithic Wavelength Converters: Many-Body Effects and Saturation Analysis,"
J. Piprek, S. Li, P. Mensz, and J. Hader, in "Optoelectronic Devices", ed. by J. Piprek, Springer, New York (2004).
"Structural dependence of carrier capture time in semiconductor quantum-well lasers,"
J. Hader, J.V. Moloney, and S.W. Koch, Appl. Phys. Lett. 85, 369-371 (2004).
"Linewidth enhancement factor and optical gain in (GaIn)(NAs)/GaAs lasers,"
N.C. Gerhardt, M.R. Hofmann, J. Hader, J.V. Moloney, S.W. Koch, and H. Riechert, Appl. Phys. Lett. 84, 1-3 (2004).
"Experimental and theoretical analysis of optically pumped semiconductor disc lasers,"
A.R. Zakharian, J. Hader, J.V. Moloney, S.W. Koch, P. Brick and S. Lutgen, Appl. Phys. Lett. 83, 1313-1315 (2003).
"Microscopic modeling of gain and luminescence in semiconductors,"
J. Hader, J.V. Moloney, S.W. Koch and W.W. Chow, invited contribution to IEEE, J. of Sel. Topics in Quantum Electron. 9, 688-697 (2003).
"Microscopic prediction of optical and electronic material properties in GaInNAs semiconductor lasers,"
J. Hader, J.V. Moloney, and S.W. Koch, IEE: Optoelectronics, 150 (1), 22-24 (2003).
"Microscopic theory of gain and spontaneous emission in GaInNAs laser materials,"
J. Hader, S.W. Koch, and J.V. Moloney, Sol. Stat. Electron., 47 (3), 513 (2003).
"Semiconductor Quantum-Well Designer Active Materials,"
J. Hader, A.R. Zakharian, J.V. Moloney, T.R. Nelson, W.J. Siskaninetz, J.E. Ehret, K. Hantke, S.W. Koch, and M. Hofmann, Optics and Photonics News, 13 (12), 22 (2002).
"Quantitative Prediction of Semiconductor Laser Characteristics Based on Low Intensity Photoluminescence Measurements,"
J. Hader, A.R. Zakharian, J.V. Moloney, T.R. Nelson, W.J. Siskaninetz, J.E. Ehret, K. Hantke, M. Hofmann, and S.W. Koch, IEEE Photonics Technology Letters, 14 (6), 762 (2002).
"Interband transitions of quantum wells and device structures containing Ga(N,As) and (Ga,In)(N,As),"
P.J. Klar, H. Grüning, W. Heimbrodt, G. Weiser, J. Koch, K. Volz, W. Stolz, S.W. Koch, S. Tomic, S.A. Choulis, T.J.C. Hosea, E.P. O'Reilly, M. Hofmann, J. Hader, and J.V. Moloney, Semicond. Science and Technology, 17 (8), 830 (2002).
"Emission Dynamics and Optical Gain of 1.3µm (GaIn)(NAs)/GaAs Lasers,"
M.R. Hofmann, N. Gerhardt, A.M. Wagner, C. Ellmers, F. Höhnsdorf, J. Koch, W. Stolz, S.W. Koch, W.W. Rühle, J. Hader, J.V. Moloney, E.P. O'Reilly, B. Borchert, A.Y. Egorov, H. Riechert, H.C. Schneider, and W.W. Chow, IEEE J. of Quantum Electronics, 38 (2), 213 (2002).
"Gain spectra of (GaIn)(NAs) laser diodes for the 1.3µm wavelength regime,"
M.Hofmann, A.Wagner, C. Ellmers, C.Schlichenmeier, S.Schäfer, F.Höhnersdorf, J.Koch, C.Agert, S.Leu, W.Stolz, S.W.Koch, W.W.Rühle, J.Hader, J.V.Moloney, and E.P.O'Reilly, Appl. Phys. Lett. 78 (20), 3009 (2001).
"Clamping of the linewidth enhancement factor in narrow quantum-well semiconductor lasers,"
J.Hader, D. Bossert, J.Stohs, W.W.Chow, S.W.Koch, and J.V.Moloney, Appl. Phys. Lett. 74 (16), 2277 (2000).
"Gain in 1.3µm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers,"
J.Hader, S.W.Koch, J.V.Moloney, and E.P.O'Reilly, Appl. Phys. Lett., 77 (5), 630 (2000).
"Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum-well lasers,"
J.Hader, S.W.Koch, J.V.Moloney, and E.P.O'Reilly, Appl. Phys. Lett., 76 (25), 3685 (2000).
"Microscopic theory of gain, absorption and refractive index in semiconductor laser materials: influence of conduction-band nonparabolicity and Coulomb-induced intersubband coupling,"
J.Hader, J.V. Moloney, and S.W.Koch, IEEE J. Quantum Elect. 35 (12), 1878 (1999).
"Modeling semiconductor amplifiers and lasers: from microscopic physics to device simulation,"
J.V. Moloney, R.Indik, J.Hader, and S.W.Koch, Journal of the Optical Society of America B, 16 (11), 2023 (1999).
"Field-dependent absorption in superlattices: Comparison of theory and experiment,"
A.Thränhardt, H.J.Kolbe, J.Hader, T.Meier, G.Weiser, and S.W.Koch, Appl. Phys. Lett., 73 (18), 2612 (1998).
"Calculation of the excitonic absorption in parabolic semiconductor quantum well structures," ,
A.Thränhardt, J.Hader and S.W.Koch, Phys. Rev. B 58, 1512 (1998).
"Optoelectronics of semiconductor superlattices,"
J.Hader, P. Thomas and S.W.Koch, Progr. Quantum Electron. 22, 128 (1998).
"Odd-parity excitons in semiconductor superlattices,"
K. Bott, J.Hader, S.W.Koch, and P. Thomas, Phys. Rev. B 56, 12784 (1997).
"Microscopic theory of the intracollisional field effect in semiconductor superlattices,"
J.Hader, F. Rossi, T. Meier, S.W.Koch, and N. Linder, Phys. Rev. B 55, 18799 (1997).
"kp-theory of the Franz-Keldysh effect,"
J.Hader, N. Linder, and G.H. Döhler, Phys. Rev. B 55, 6960 (1997).